Last edited by Shakakasa
Friday, July 31, 2020 | History

1 edition of Hot-Carrier Reliability of MOS VLSI Circuits found in the catalog.

Hot-Carrier Reliability of MOS VLSI Circuits

by Yusuf Leblebici

  • 358 Want to read
  • 28 Currently reading

Published by Springer US in Boston, MA .
Written in English

    Subjects:
  • Systems engineering,
  • Engineering,
  • Computer engineering

  • About the Edition

    This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and simulation methods for estimating hot-carrier effects in the circuit environment. The newly emerging approaches to the VLSI design-for-reliability and rule-based reliability diagnosis are also discussed in detail. Hot-Carrier Reliability of MOS VLSI Circuits is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models. VLSI designers will benefit from this book since it offers a comprehensive overview of the interacting mechanisms that influence hot-carrier reliability, and also provides useful guidelines for reliable VLSI design. This volume can be used as an advanced textbook or reference for a graduate-level course on VLSI reliability.

    Edition Notes

    Statementby Yusuf Leblebici, Sung-Mo (Steve) Kang
    SeriesThe Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing -- 227, Springer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing -- 227.
    ContributionsKang, Sung-Mo (Steve)
    Classifications
    LC ClassificationsTK7888.4
    The Physical Object
    Format[electronic resource] /
    Pagination1 online resource (xvii, 212 pages).
    Number of Pages212
    ID Numbers
    Open LibraryOL27043974M
    ISBN 101461364299, 1461532507
    ISBN 109781461364290, 9781461532507
    OCLC/WorldCa851745862

    He was an IEEE CAS Distinguished Lecturer () and holds six patents, published over papers and co-authored six books, Design Automation For Timing-Driven Layout Synthesis(), Hot-Carrier Reliability of MOS VLSI Circuits(), Physical Design for Multichip Modules (), and Modeling of Electrical Overstress in Integrated.   VLSI Handbook is a reference guide on very large scale integration (VLSI) microelectronics and its aspects such as circuits, fabrication, and systems applications. This handbook readily answers specific questions and presents a systematic compilation of information regarding the VLSI Edition: 1.

    The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in by Nikkei Business Publishers. Sung-Mo Kang’s books. Sung-Mo Kang Average rating: 94 ratings 7 reviews 13 distinct works • Similar authors. CMOS Digital Integrated Circuits Analysis & Design. avg Hot-Carrier Reliability of Mos VLSI Circuits by. Yusuf Leblebici, Sung-Mo Kang/5.

    Looking for books by Yusuf Leblebici? See all books authored by Yusuf Leblebici, including Hot-Carrier Reliability of MOS VLSI Circuits (The Springer International Series in Engineering and Computer Science), and Reliability of Nanoscale Circuits and Systems: Methodologies and Circuit Architectures, and more on This work classifies hot-carrier stress (HCS) and negative- & positive-bias temperature instability (N/PBTI) in the larger context of circuit and product aging. The area of conflict regarding the importance of HCS and N/PBTI will be evaluated. Different fields of applications will be by: 3.


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Hot-Carrier Reliability of MOS VLSI Circuits by Yusuf Leblebici Download PDF EPUB FB2

Hot-Carrier Reliability of MOS VLSI Circuits (The Springer International Series in Engineering and Computer Science) [Leblebici, Yusuf, Sung-Mo (Steve) Kang] on *FREE* shipping on qualifying offers. Hot-Carrier Reliability of MOS VLSI Circuits (The Springer International Series in Engineering and Computer Science)Cited by: Hot-carrier induced degrada­ tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits.

It is likely to become even more important in future generation chips, since the down­ ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. He is the coauthor of 4 textbooks, namely, Hot-Carrier Reliability of MOS VLSI Circuits (Kluwer Academic Publishers, ), CMOS Digital Integrated Circuits: Analysis and Design (McGraw Hill, 1st Edition2nd Edition3rd Edition ), CMOS Multichannel Single-Chip Receivers for Multi-Gigabit Optical Data Communications (Springer Cited by:   Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits.

It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem.2/5(1). Hot-carrier induced degrada­ tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits.

It is likely to become even more important in future generation chips, since the down­ ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this : Springer US. Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-carrier injection mechanisms, (b) the device degradation, (c) the hot-carrier resistant device structures and (d) the hot-carrier phenomena under a bias of less than 3 V.

Two significant hot-carrier injection mechanisms are proposed which are different from those of the channel hot-electron (CHE) and Cited by: Accurate MOS Device Hot Carrier Models for VLSI Reliability Simulation Steve S.

Chung, J.-J. Yang and J Su Department of Elecrronic Engineering, Naionul Chiao Tung University, Hsinchu Taiwan, R.O.C. Abstract - This paper describes a Spicexompatible circuit relia- bility simulation model of submicron LDD MOS devices.

The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit by: Hot-Carrier Reliability of MOS VLSI Circuits is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures.

() Circuit Design for Reliability. In: Hot-Carrier Reliability of MOS VLSI Circuits. The Springer International Series in Engineering and Computer Science (VLSI, Computer Architecture and Digital Signal Processing), vol Author: Yusuf Leblebici, Sung-Mo (Steve) Kang.

Hot-carrier reliability of MOS VLSI circuits. [Yusuf Leblebici; Sung-Mo Kang] Circuit Reliability -- Review of Circuit Reliability Simulation Tools -- Circuit Reliability Simulation Using iSMILE: A Case Study -- iDSIM2: Hierarchical Circuit Reliability Simulation -- 7. Macromodeling of Hot-Carrier Induced.

Hot-Carrier-Reliability Design Guidelines for CMOS Logic Circuits Article (PDF Available) in IEEE Journal of Solid-State Circuits 29(3) - April with 65 Reads How we measure 'reads'. E-Book Review and Description: As a result of the complexity and the density of VLSI chips enhance with shrinking design tips, the evaluation of long-time interval reliability of MOS VLSI circuits is popping into a vital disadvantage.

Hot Electron Effect. Hot carrier injection in MOSFETs occurs when a carrier from Si channel is injected into the gate oxide. For this transition, a carrier should have a high kinetic energy to reach the conduction or valence band in the oxide. This energy amount for an electron and hole is.

The accomplishments during the contract period (28 Jun. to 27 Jun. ) on the computer aided analysis of CMOS device and circuit degradation due to hot-carrier effects are described. The task involved four subtasks: (1) simulation of gate oxide degradation during long-term circuit operation; (2) determination of overall circuit performance after hot-electron stress; (3) Author: S.

Kang, I. Hajj, Y. Leblebici, C. Diaz, P. power supply voltage are presented to improve hot-carrier related reliability in CMOS digital circuits. HOT-CARRIER INDUCED DEVICE DEGRADATION IN CMOS INVERTERS The hot-carrier induced degradation of MOS transistors is caused by the injection of high-energy electrons and holes –/96$ IEEEFile Size: KB.

The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization.

Key words: MOS transistors, Hot carriers, Weibull distribution ABSTRACT The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips.

Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance. The hot-carrier-induced degradation of MOS transistor characteristics is one of the pri-mary mechanisms affecting the long-term reliability of MOS VLSI circuits.

It is likely to become even more critical in the future-generation chips, since the scaling of transistor 3. The reliability evaluation of MOS transistors is one of the most important subjects in device engineering and VLSI design. The down-scaling of device dimensions adversely affects device reliability.

A new MOSFET hot carrier model in SPICE feasible for VLSI reliability analysis A newly-developed SPICE-compatible submicron LDD MOS transistor model for simulating the hot electron effect in VLSI circuit is proposed.

In addition, hot electron induced degradation effect and the reliability analysis in a circuit simulation environment are.This report describes the development and application of parametric and geometry based macro-models of hot-carrier induced dynamic degradation in MOS VLSI circuits.

Previously, a simulation based approach has been used for reliability analysis, but this is inefficient for reliability assessment of very large scale integrated circuits. Geometry-based macro-models for hot-carrier reliability.This book ad­ dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi­ neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques.